This position is equivalent to a CTO in a start-up environment with strong investment backing. The ideal profile should possess a strong technical expertise in Gan application in semiconductor application, entrepreneur mindset, good leadership experience and vision for technology to lead the technical development of the team.
Job Scope
- Be a member of the leadership team to achieve the vision and mission of the entity.
- Lead the team in technology road mapping and R&D pathfinding in device architecture, fabrication process technology, and MMIC design.
- Coordinate with the Engineering team to develop ultra-high frequency devices, ultra-low voltage devices, and their MMICs.
- Coordinate with the Engineering and Operations teams to ensure timely delivery of the projects.
- Initiate and secure research grants and industry funding.
- Initiate, coordinate and manage research collaborations with IHLs and industry partners.
- Provide regular progress report of the Technology team's activities to management.
Requirements
- PhD in Electrical & Electronic Engineering, Materials Science and Engineering, Microelectronics Engineering, or closely related fields are welcome to apply.
- Deep understanding of GaN-HEMT device physics and GaN-based MMICs.
- At least 10 years of post-PhD hands-on experience in GaN HEMT and MMIC technology development including design, characterization
- 7-years of experience in leading a team of research engineers/scientists in managing multiple projects.
- Candidates with industry experience in GaN related R&D would be preferred.
- Working knowledge and hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, problem-solving methods, and in-line metrology techniques is desired.
- Possess strong leadership, project management, interpersonal and oral/written communication skills.
Interested candidates who wish to apply for the advertised position, please click on Apply. We regret that only shortlisted candidates will be notified.
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