NGTC (National GaN Technology Centre) in IME is looking for a talent to join its Technology Team for R&D developments. The qualified candidate has opportunities to participate in technical tasks related to RF GaN foundry for the applications up to 140 GHz. This includes the following area:
Perform experiments to analyse and determine the root cause of failure in GaN devices (e.g. Transistors, Capacitors, Inductors, Resistors, and Diode) and circuits.
Join the cross-functional teams on appropriate FMEA (Failure Mode Effects & Analysis) techniques to establish an understanding of the failure mechanisms of the devices.
Drives device reliability/qualification activities, and data correlation studies.
Manage large & disparate data sets and distil information into concise presentations with possible recommendations as quick feedback to the engineering team.
Develop new FMEA techniques to improve detection capability, productivity or process optimization.
PhD degree in Electrical Engineering (EE), Materials Science or Physics, MS degree in EE with 5+ years or BS degree with 7+ years of relevant working experiences.
three-year of FMEA experience in step-by-step approach for identifying all possible failures in the semiconductor industry.
FMEA experience in Wide-Bandgap (WBG) devices (GaAs, GaN) is plus.
Good knowledge of WBG device physics and its fabrication is a big plus.
In-Depth understanding of FMEA techniques (e.g. delaying of devices/chips by wet etching or plasma etching and its data analysis) with good hands-on experience in using different analytical techniques (e.g. SIMS, XPS, AES, SEM, FIB-SEM, TEM, AFM, etc.)
Understanding of semiconductor device qualification standard such as JEDEC.
Excellent report writing and presentation skills, able to robustly defend data analysis and conclusions where necessary.
