Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
Improve baseline processes for high-quality SiGe and Ge epitaxy: control uniformity and thickness and minimize threading dislocation density.
Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge/SiGe devices into Silicon photonic circuits.
Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
Provide technical support for technology transfer and process release requirements.
Prepare technical presentations and papers for meetings, conferences and journals.
Requirements
PhD degree in Materials Science and Engineering, Physics, Chemical Engineering, Chemistry, Microelectronics Engineering, or closely related fields are welcome to apply.
Prior 3 to 5 years direct experience in SiGe/Ge epitaxy and materials characterization.
Working knowledge and prior hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, and problem-solving methods, is desired.
Understanding of epitaxial system hardware is advantageous.
Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, AFM, Ellipsometry is advantageous.
Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.
