TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
Create and simulate practical & efficient junction terminations.
Model transport and carrier scattering in devices operating under extreme ambient conditions.
Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.
Job Requirements
PhD Degree in Electrical Engineering or related field.
>2-3 years industrial experience for high power devices design and modeling.
Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
Hands-on skill in designing MOSFET/diode layouts.
Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.
